What is nmos and pmos

This method is rarely used. A MOS transistor can be affected by the avalanche phenomena in the drain and source terminals. The MOS transistor can also be affected by breaks in the thin oxide layer of the gate that may destroy the device.

Name required. E-mail required. A FET Field Effect Transistor is a voltage controlled device where its current carrying ability is changed by applying an electronic field. MOSFET work by inducing a conducting channel between two contacts called the source and the drain by applying a voltage on the oxide-insulated gate electrode.

A NMOS transistor is made up of n-type source and drain and a p-type substrate. When a voltage is applied to the gate, holes in the body p-type substrate are driven away from the gate. Since electrons are faster than holes, NMOSs are also more useful in fast-switching applications. This gives a disadvantage to NMOS s because the accumulation of these contaminants around the gate could turn an NMOS device on when it is supposed to be off. In PMOS devices, the source and the drain are made of p- type material while the bulk is made of n — type semiconductors.

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